Open AccessИсследование примеси магния в кремнии
Author(s) -
Л.М. Порцель,
В.Б. Шуман,
А.А. Лаврентьев,
А.Н. Лодыгин,
Nikolai V. Abrosimov,
Ю.А. Астров
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.04.49134.9318
Subject(s) - magnesium , diffusion , impurity , silicon , analytical chemistry (journal) , chemistry , conductivity , effective diffusion coefficient , ion , materials science , thermodynamics , metallurgy , chromatography , physics , medicine , organic chemistry , radiology , magnetic resonance imaging
Profiles of both electrically active and total concentrationof magnesium impurity in silicon were measured. Diffusionwas performed into the floating zone dislocation-free n-typesilicon at the temperatures Tdiff = 1000, 1100◦C and durationfrom 0.5 to 22.5 h. The depth profiles of the electrically activeinterstitial magnesium concentration NMgi (x) were determined bydifferential conductivity method, while the total concentrationprofile Ntotal(x) — with secondary ion mass spectroscopy. Thetotal concentration of magnesium was found to be almost twoorders higher than the concentration NMgi . It turned out that theeffective diffusion coefficient DMgi decreases with the diffusiontime. Possible physical processes responsible for formation of theelectrically inactive component of magnesium impurity and thedependence of effective diffusion coefficient on time are discussed.