Open AccessРазработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения
Author(s) -
Калиновский Виталий Станиславович,
Контрош Евгений Владимирович,
Климко Григорий Викторович,
Иванов Сергей Викторович,
Юферев Валентин Степанович,
Бер Борис Яковлевич,
Казанцев Дмитрий Юрьевич,
Андреев Вячеслав Михайлович
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.03.49034.9298
Subject(s) - diode , optoelectronics , tunnel junction , current density , materials science , molecular beam epitaxy , tunnel diode , fabrication , current (fluid) , voltage , peak current , epitaxy , electrical engineering , layer (electronics) , quantum tunnelling , chemistry , nanotechnology , physics , electrode , engineering , medicine , alternative medicine , quantum mechanics , pathology , electrochemistry
Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .