Open AccessРоль структурных несовершенств графена в резонансном туннелировании через локализованные состояния в h-BN барьере ван-дер-ваальсовых гетероструктур
Author(s) -
М.В. Григорьев,
Д.А. Казарян,
Е.Е. Вдовин,
Ю.Н. Ханин,
С.В. Морозов,
Kostya S. Novoselov
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.03.49025.9249
Subject(s) - quantum tunnelling , graphene , van der waals force , heterojunction , materials science , plasma , condensed matter physics , layer (electronics) , nanotechnology , physics , quantum mechanics , molecule
Investigated resonant tunneling through defect levels in h-BN barrier van der Waals heterostructures. The effect of multiplication of tunnel resonances through these levels was found, due to the influence of a high degree of defectiveness of the structure of the neighboring layer of graphene, created by intentionally processing in plasma. Various mechanisms of such influence are discussed.