Open AccessОтрицательная дифференциальная проводимость структур на основе оксида лантана
Author(s) -
А. Игитян,
Н. Агамалян,
Р. Овсепян,
С. Петросян,
Г. Бадалян,
И. А. Гамбарян,
А. Папикян,
Е. Кафадарян
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.02.48915.9280
Subject(s) - conductivity , materials science , evaporation , electrode , surface conductivity , analytical chemistry (journal) , substrate (aquarium) , lanthanum oxide , oxide , silicon , lanthanum , proton , silicon oxide , hydrogen , chemistry , inorganic chemistry , optoelectronics , metallurgy , physics , oceanography , silicon nitride , chromatography , quantum mechanics , organic chemistry , thermodynamics , geology
Using e-beam evaporation technique, transparent surface-hydrated lanthanum oxide (OH-La2O3) films with a thickness of 40, 140, and 545 nm were obtained. The electrical and optical characteristics of Al/OH-La2O3/p-Si structures were studied, where aluminum and a silicon substrate with p-type conductivity were used as the upper and lower electrodes, respectively.Negative differential conductivity region in the conductivity–voltage characteristics for the forward bias voltage was found; a possible mechanism of negative differential conductivity is explained by proton transport in hydrogen bonded chains of water molecules at the OH-La2O3 film surface.