Open AccessДиэлектрическая спектроскопия и особенности механизма фазового перехода полупроводник-металл в пленках VO-=SUB=-2-=/SUB=-
Author(s) -
А.В. Ильинский,
Р.А. Кастро,
М.Э. Пашкевич,
Е.Б. Шадрин
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.02.48910.9267
Subject(s) - dissipation factor , materials science , hysteresis , dielectric , atmospheric temperature range , analytical chemistry (journal) , dielectric loss , phase diagram , vanadium , phase (matter) , condensed matter physics , semiconductor , range (aeronautics) , thermodynamics , chemistry , physics , composite material , metallurgy , optoelectronics , organic chemistry , chromatography
In the range of 0.1–10^6 Hz, the temperature-induced transformation of the frequency dependences of the dielectric-loss tangent tanδ( f ) as well as the Cole–Cole diagrams for undoped vanadium-dioxide films are investigated. The measurements are carried out in the temperature range T = 273–373 K. It is shown that the shape of the Cole–Cole diagrams for all films depends slightly on the temperature in the specified interval, while the frequencies f _0 corresponding to the peaks of the function tanδ( f ) increase with temperature. The thermal-hysteresis loops of the frequency positions f _0( T ) of the peaks are measured. When interpreting the data of dielectric spectroscopy, a complex equivalent electrical circuit of the sample is used; it makes it possible to detect the presence of two types of grains with different electrical properties in undoped VO_2 films. The presence of two types of grains determines the features of the semiconductor–metal phase-transition mechanism in VO_2 films.