Open AccessСравнительный анализ инжекционных микродисковых лазеров на основе квантовых ям InGaAsN и квантовых точек InAs/InGaAs
Author(s) -
E. I. Moiseev,
М. В. Максимов,
Н.В. Крыжановская,
O. I. Simchuk,
M. M. Kulagina,
С.А. Кадинская,
Mircea Guină,
A. E. Zhukov
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.02.48907.9290
Subject(s) - lasing threshold , optoelectronics , quantum well , materials science , laser , gallium arsenide , quantum dot , quantum dot laser , diode , excited state , semiconductor laser theory , optics , physics , wavelength , atomic physics
The results are presented on a comparative analysis of the spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx μm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold compared to microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of the radiated power with the laser modes. They are also characterized by a jump to excited-state optical transition lasing. The InGaAsN-based microdisk lasers lack these disadvantages.