Open AccessМодель термополевой нестабильности p-МОП-транзисторов при отрицательном смещении затвора
Author(s) -
О.В. Александров
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.02.48901.9111
Subject(s) - negative bias temperature instability , materials science , silicon , substrate (aquarium) , electron , gate oxide , transistor , ion , hydrogen , oxide , analytical chemistry (journal) , mosfet , optoelectronics , voltage , electrical engineering , chemistry , physics , oceanography , organic chemistry , quantum mechanics , chromatography , engineering , metallurgy , geology
Abstract A new quantitative model of the negative-bias temperature instability (NBTI) of p -MOS (metal-oxide-semiconductor) transistors is developed. The model is based on the reaction of the depassivation of surface states at the Si–SiO_2 interphase boundary (IPB) and hydrogen-containing hole traps near the Si–SiO_2 IPB by positively charged hydrogen ions H^+, accumulated in the p ^+-type inversion layer of the silicon substrate. The dependences of the surface and space charges in p -MOS transistors on the NBTI time are controlled by the kinetics of H^+-ion diffusion and drift from the silicon substrate to the Si–SiO_2 IPB. The effect of the gate voltage on the NBTI is explained by the effect of the electric-field strength on the H^+ ion segregation coefficient at the Si–SiO_2 IPB. The relaxation of positive space charge introduced into the gate dielectric during NBTI is described by the tunnel discharge of oxide traps by silicon-substrate electrons.