Open AccessСтруктурное и диэлектрическое исследование тонких аморфных слоев системы Ge-Sb-Te, полученных методом высокочастотного магнетронного распыления
Author(s) -
Р.А. Кастро Арата,
В. М. Стожаров,
Д. М. Долгинцев,
A. Koov,
Ю. Сайто,
P. J. Fons,
Дж. Томинага,
Н. И. Анисимова,
A. V. Kolobov
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.02.48895.9287
Subject(s) - dielectric , materials science , permittivity , dielectric permittivity , dielectric loss , dielectric dispersion , relaxation (psychology) , dispersion (optics) , condensed matter physics , maxima , optics , optoelectronics , physics , psychology , social psychology , art , performance art , art history
The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.