Open AccessМикропрофилирование 4H-SiC сухим травлением в технологии формирования структуры полевого транзистора с затвором Шоттки
Author(s) -
Н.Д. Ильинская,
Н. М. Лебедева,
Ю.М. Задиранов,
П. А. Иванов,
T. P. Samsonova,
O. I. Kon’kov,
А. С. Потапов
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48783.9223
Subject(s) - reactive ion etching , fabrication , materials science , etching (microfabrication) , optoelectronics , epitaxy , ion , plasma , nanotechnology , chemistry , layer (electronics) , physics , medicine , alternative medicine , organic chemistry , pathology , quantum mechanics
Methods of micro-profiling of 4 H -SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45°) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4 H -SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated.