Open AccessНеодномерный эффект dU/dt в мощных тиристорах
Author(s) -
С.Н. Юрков,
Т.Т. Мнацаканов,
А.Г. Тандоев
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48777.9137
Subject(s) - thyristor , integrated gate commutated thyristor , mos controlled thyristor , static induction thyristor , control theory (sociology) , value (mathematics) , thyristor drive , power (physics) , voltage , gate turn off thyristor , mathematics , computer science , physics , electrical engineering , engineering , control (management) , statistics , thermodynamics , transistor , artificial intelligence , gate oxide
The method allowing to take into account the influence of the design peculiarities of a power thyristor on its dU/dt parameter is described. A simple model is proposed, that makes it possible to find the parameters of the auxiliary thyristor structure that belongs to the regenera-tive control gate and provides the given value of the thyristor dU/dt parameter. The minimum possible value of turn-on current of the thyristor, limited by a given value of the maximum rate of voltage rise, is found.