Open AccessОптимизация толщины слоя In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As в трехкаскадном In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As/GaAs/In-=SUB=-0.5-=/SUB=-Ga-=SUB=-0.5-=/SUB=-P солнечном элементе
Author(s) -
D. M. Legan,
Oleg P. Pcheliakov,
В. В. Преображенский
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48776.9240
Subject(s) - solar cell , carrier lifetime , materials science , gallium arsenide , layer (electronics) , optoelectronics , charge carrier , silicon , nanotechnology
The search of the optimal absorbing layer thickness in the bottom In0.3Ga0.7As subcell of the triple-junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P solar cell was carried out assisted by the Sentaurus TCAD software package, depending on the minority charge carrier lifetime in this layer. The lifetime valuewas set manually and it was in the range from 17 ps to 53 ns. The calculation results showed that the optimal thickness varies from 0.9 to 7.5 μm. The estimation of the efficiency contribution of the bottom In0.3Ga0.7As subcell to the given triple-junction solar cell, at various lifetime values, was made. Its value varied from 1 to 7%.