Оптимизация толщины слоя In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As в трехкаскадном In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As/GaAs/In-=SUB=-0.5-=/SUB=-Ga-=SUB=-0.5-=/SUB=-P солнечном элементе | Zendy

D. M. Legan | Zendy; Oleg P. Pcheliakov | Zendy; В. В. Преображенский | Zendy

Open Access

Оптимизация толщины слоя In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As в трехкаскадном In-=SUB=-0.3-=/SUB=-Ga-=SUB=-0.7-=/SUB=-As/GaAs/In-=SUB=-0.5-=/SUB=-Ga-=SUB=-0.5-=/SUB=-P солнечном элементе

Author(s) -

D. M. Legan,

Oleg P. Pcheliakov,

В. В. Преображенский

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2020.01.48776.9240

Subject(s) - solar cell , carrier lifetime , materials science , gallium arsenide , layer (electronics) , optoelectronics , charge carrier , silicon , nanotechnology

The search of the optimal absorbing layer thickness in the bottom In0.3Ga0.7As subcell of the triple-junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P solar cell was carried out assisted by the Sentaurus TCAD software package, depending on the minority charge carrier lifetime in this layer. The lifetime valuewas set manually and it was in the range from 17 ps to 53 ns. The calculation results showed that the optimal thickness varies from 0.9 to 7.5 μm. The estimation of the efficiency contribution of the bottom In0.3Ga0.7As subcell to the given triple-junction solar cell, at various lifetime values, was made. Its value varied from 1 to 7%.

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