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Исследование мощности люминесценции экситонов и примесно-дефектных центров, возбуждаемых с помощью двухфотонного поглощения
Author(s) -
А.А. Гладилин,
В.П. Данилов,
Н.Н. Ильичев,
В.П. Калинушкин,
М.И. Студеникин,
О.В. Уваров,
В.А. Чапнин,
А.В. Рябова,
А.В. Сидорин,
Э.С. Гулямова,
V V Tumorin,
П.П. Пашинин
Publication year - 2019
Publication title -
физика и техника полупроводников
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48770.9143
Subject(s) - luminescence , excitation , impurity , exciton , crystal (programming language) , laser , femtosecond , atomic physics , materials science , radiation , molecular physics , optics , chemistry , optoelectronics , condensed matter physics , physics , organic chemistry , quantum mechanics , computer science , programming language
In the present work, using as an example ZnSe: Fe2+ single crystals, it was experimentally and theoretically studied the effect of the average power of femtosecond laser radiation on the average luminescence power of excitons and impurity-defect centers upon two-photon excitation of the electronic system of a crystal. It has been experimentally shown that the average luminescence power of crystal excitons in the studied range of excitation powers is proportional to 4 degrees of the average excitation radiation power. The average luminescence power of impurity-defect centers has a quadratic character. A theory is constructed that explains the experimentally observed dependencies. It is noted that the nature of the dependence of the crystal luminescence on the pump power during two-photon excitation can be used to estimate the degree of contamination of the crystal by impurity-defect centers.

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