
Высокочастотная проводимость неупорядоченных полупроводников в области перехода от линейной к квадратичной частотной зависимости
Author(s) -
М.А. Ормонт,
И.П. Звягин
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48766.9106
Subject(s) - conductivity , condensed matter physics , variable range hopping , crossover , terahertz radiation , frequency dependence , impurity , range (aeronautics) , semiconductor , electrical resistivity and conductivity , materials science , physics , quantum mechanics , nuclear magnetic resonance , composite material , artificial intelligence , computer science
Features of the high-frequency conductivity of disordered semiconductors related to hopping electron transport over the impurity band are discussed. The frequency dependence of the real part of the low-temperature phononless conductivity in the region of the transition (crossover) from the linear to quadratic frequency dependence of the conductivity is calculated in the pair approximation. It is shown that the crossover in the terahertz-frequency range is related to the transition of the conductivity from the variable-range to fixed-range hopping regime with increasing frequency.