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Фотодиэлектрический эффект в кристаллах силленита Bi-=SUB=-12-=/SUB=-SiO-=SUB=-20-=/SUB=-
Author(s) -
В.Т. Аванесян,
I. V. Piskovatskova
Publication year - 2020
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2020.01.48763.9192
Subject(s) - photoconductivity , bismuth , dielectric , materials science , excitation , silicate , low frequency , thermal conduction , character (mathematics) , condensed matter physics , optoelectronics , optics , physics , geometry , mathematics , quantum mechanics , astronomy , metallurgy , composite material
The results of studies of the effect of illumination on the frequency dependence of the electrical parameters of bismuth silicate Bi_12SiO_20 single crystals are presented. Illumination in the visible spectral region induces a change in the dielectric parameters (the photodielectric effect) and the manifestation of photoconductivity in the low-frequency region under study. The hopping character of conduction in the dark and upon excitation with light is established. The possible mechanisms of the photodielectric effect and charge transport in the crystals are discussed.

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