Open AccessТвердые растворы In-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-N: проблемы стабильности состава
Author(s) -
V. N. Brudnyı̆,
M. D. Vilisova,
Л.Э. Великовский
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.12.48636.9239
Subject(s) - molecular beam epitaxy , homogeneous , materials science , sputtering , solubility , sputter deposition , solid solution , phase (matter) , mixing (physics) , layer (electronics) , thin film , epitaxy , analytical chemistry (journal) , crystallography , optoelectronics , thermodynamics , metallurgy , chemistry , nanotechnology , physics , organic chemistry , quantum mechanics , chromatography
. The phase diagrams and growth conditions of InxAl1-xN solid solutions by magnetron sputtering, molecular beam and gas-phase epitaxy from organometallic compounds are analyzed. Mutual equilibrium solubility in a wide range of compositions of thick layers of this solution is close to zero. Moreover, the presence of elastic misfit stresses for thin InxAl1-xN films narrows the unstable mixing region. Optimization of the growing conditions makes it possible to obtain the homogeneous high-quality InxAl1-xN layers suitable for the production of a barrier layer in an InAlN/GaN HEMT.