Твердые растворы In-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-N: проблемы стабильности состава | Zendy

V. N. Brudnyı̆ | Zendy; M. D. Vilisova | Zendy; Л.Э. Великовский | Zendy

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Твердые растворы In-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-N: проблемы стабильности состава

Author(s) -

V. N. Brudnyı̆,

M. D. Vilisova,

Л.Э. Великовский

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.12.48636.9239

Subject(s) - molecular beam epitaxy , homogeneous , materials science , sputtering , solubility , sputter deposition , solid solution , phase (matter) , mixing (physics) , layer (electronics) , thin film , epitaxy , analytical chemistry (journal) , crystallography , optoelectronics , thermodynamics , metallurgy , chemistry , nanotechnology , physics , organic chemistry , quantum mechanics , chromatography

. The phase diagrams and growth conditions of InxAl1-xN solid solutions by magnetron sputtering, molecular beam and gas-phase epitaxy from organometallic compounds are analyzed. Mutual equilibrium solubility in a wide range of compositions of thick layers of this solution is close to zero. Moreover, the presence of elastic misfit stresses for thin InxAl1-xN films narrows the unstable mixing region. Optimization of the growing conditions makes it possible to obtain the homogeneous high-quality InxAl1-xN layers suitable for the production of a barrier layer in an InAlN/GaN HEMT.

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