Open AccessПрименение диодов Шоттки в терагерцовом частотном диапазоне
Author(s) -
Н.А. Торхов,
Л.И. Бабак,
А.А. Коколов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.12.48630.9215
Subject(s) - terahertz radiation , schottky diode , optoelectronics , materials science , semiconductor , electronics , reliability (semiconductor) , diode , substrate (aquarium) , engineering physics , electronic engineering , electrical engineering , engineering , physics , power (physics) , oceanography , quantum mechanics , geology
The broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa–substrate and mesa–mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.