Краевое легирование в графеновых приборах на подложках SiO-=SUB=-2-=/SUB=- | Zendy

Г.Ю. Васильева | Zendy; Д. Смирнов | Zendy; Ю. Б. Васильев | Zendy; А.А. Грешнов | Zendy; R. J. Haug | Zendy

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Краевое легирование в графеновых приборах на подложках SiO-=SUB=-2-=/SUB=-

Author(s) -

Г.Ю. Васильева,

Д. Смирнов,

Ю. Б. Васильев,

А.А. Грешнов,

R. J. Haug

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.12.48627.9151

Subject(s) - graphene , ribbon , materials science , bilayer graphene , doping , enhanced data rates for gsm evolution , condensed matter physics , conductivity , graphene nanoribbons , bilayer , etching (microfabrication) , electron , layer (electronics) , optoelectronics , nanotechnology , composite material , chemistry , membrane , physics , telecommunications , biochemistry , quantum mechanics , computer science

The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO_2 near the ribbon edges. The method of the formation of abrupt p – n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.

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