Open AccessКраевое легирование в графеновых приборах на подложках SiO-=SUB=-2-=/SUB=-
Author(s) -
Г.Ю. Васильева,
Д. Смирнов,
Ю. Б. Васильев,
А.А. Грешнов,
R. J. Haug
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.12.48627.9151
Subject(s) - graphene , ribbon , materials science , bilayer graphene , doping , enhanced data rates for gsm evolution , condensed matter physics , conductivity , graphene nanoribbons , bilayer , etching (microfabrication) , electron , layer (electronics) , optoelectronics , nanotechnology , composite material , chemistry , membrane , physics , telecommunications , biochemistry , quantum mechanics , computer science
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO_2 near the ribbon edges. The method of the formation of abrupt p – n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.