Open AccessТемпературная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-
Author(s) -
И.В. Боднарь,
Б.Т. Чан,
В.Н. Павловский,
И.Е. Свитенков,
Г.П. Яблонский
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.12.48614.9221
Subject(s) - materials science , planar , semiconductor , band gap , crystallization , spinel , transmittance , atmospheric temperature range , spectral line , absorption (acoustics) , range (aeronautics) , crystallography , analytical chemistry (journal) , condensed matter physics , optics , chemistry , optoelectronics , thermodynamics , physics , composite material , metallurgy , computer graphics (images) , chromatography , astronomy , computer science
MnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.