Высокоомный антимонид галлия, полученный методом газофазной эпитаксии из металлорганических соединений | Zendy

Р.В. Левин | Zendy; A. S. Vlasov | Zendy; A. N. Smirnov | Zendy; Б.В. Пушный | Zendy

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Высокоомный антимонид галлия, полученный методом газофазной эпитаксии из металлорганических соединений

Author(s) -

Р.В. Левин,

A. S. Vlasov,

A. N. Smirnov,

Б.В. Пушный

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.12.48609.9208

Subject(s) - materials science , epitaxy , metalorganic vapour phase epitaxy , analytical chemistry (journal) , mineralogy , optoelectronics , chemistry , composite material , layer (electronics) , chromatography

The paper presents the results of studies of grown epitaxial GaSb layers by MOCVD method at a ratio of TMSb/TEGa from 1 to 50. When the ratio TMSb/TEGa=50 were grown epitaxial GaSb layers with a specific electrical resistance of 400 Ω•cm. Crystalline perfection of these layers was evaluated by several methods and remained commensurate with the quality of the used substrates.

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