Open AccessВысокоомный антимонид галлия, полученный методом газофазной эпитаксии из металлорганических соединений
Author(s) -
Р.В. Левин,
A. S. Vlasov,
А. Н. Смирнов,
Б.В. Пушный
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.12.48609.9208
Subject(s) - materials science , epitaxy , metalorganic vapour phase epitaxy , analytical chemistry (journal) , mineralogy , optoelectronics , chemistry , composite material , layer (electronics) , chromatography
The paper presents the results of studies of grown epitaxial GaSb layers by MOCVD method at a ratio of TMSb/TEGa from 1 to 50. When the ratio TMSb/TEGa=50 were grown epitaxial GaSb layers with a specific electrical resistance of 400 Ω•cm. Crystalline perfection of these layers was evaluated by several methods and remained commensurate with the quality of the used substrates.