Open AccessКомбинационное рассеяние света в кристаллах AlN, выращенных методом сублимации на затравках SiC и AlN
Author(s) -
И. Д. Бреев,
А.Н. Анисимов,
А.А. Вольфсон,
O. P. Kazarova,
Е. Н. Мохов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48461.9171
Subject(s) - sublimation (psychology) , materials science , raman spectroscopy , dopant , impurity , tungsten , raman scattering , graphite , evaporation , analytical chemistry (journal) , doping , crystallography , optoelectronics , composite material , metallurgy , chemistry , optics , psychology , physics , organic chemistry , chromatography , psychotherapist , thermodynamics
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.