Open AccessИзменение люминесцентных характеристик полупроводниковых гетероструктур при ионно-лучевом травлении
Author(s) -
Я.В. Левицкий,
М.И. Митрофанов,
Г.В. Вознюк,
Д.Н. Николаев,
М.Н. Мизеров,
В.П. Евтихиев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48459.9146
Subject(s) - heterojunction , luminescence , materials science , optoelectronics , annealing (glass) , radiation , quenching (fluorescence) , ion , optics , chemistry , fluorescence , physics , composite material , organic chemistry
Ion-beam etching of AlGaAs / GaAs heterostructures leads to the occurrence of radiation defects and, as a result, luminescence quenching. Annealing at 620 ° C in an As atmosphere makes it possible to achieve almost complete recovery of the quantum luminescence efficiency for the case of radiation defects occurring at a distance of up to 150 nm from the heterojunction.