Изменение люминесцентных характеристик полупроводниковых гетероструктур при ионно-лучевом травлении | Zendy

Я.В. Левицкий | Zendy; М.И. Митрофанов | Zendy; Г.В. Вознюк | Zendy; Д.Н. Николаев | Zendy; М.Н. Мизеров | Zendy; В.П. Евтихиев | Zendy

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Изменение люминесцентных характеристик полупроводниковых гетероструктур при ионно-лучевом травлении

Author(s) -

Я.В. Левицкий,

М.И. Митрофанов,

Г.В. Вознюк,

Д.Н. Николаев,

М.Н. Мизеров,

В.П. Евтихиев

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.11.48459.9146

Subject(s) - heterojunction , luminescence , materials science , optoelectronics , annealing (glass) , radiation , quenching (fluorescence) , ion , optics , chemistry , fluorescence , physics , composite material , organic chemistry

Ion-beam etching of AlGaAs / GaAs heterostructures leads to the occurrence of radiation defects and, as a result, luminescence quenching. Annealing at 620 ° C in an As atmosphere makes it possible to achieve almost complete recovery of the quantum luminescence efficiency for the case of radiation defects occurring at a distance of up to 150 nm from the heterojunction.

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