Open AccessПротиводействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов
Author(s) -
M. A. Mintairov,
V. V. Evstropov,
S. A. Mintairov,
М. Z. Shvarts,
Н.А. Калюжный
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48457.9190
Subject(s) - heterojunction , optoelectronics , current (fluid) , photoelectric effect , voltage , situated , electrical engineering , open circuit voltage , materials science , short circuit , quantum tunnelling , condensed matter physics , physics , engineering , computer science , artificial intelligence
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.