Open AccessСтруктура халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-As-=SUB=-5-=/SUB=-, легированного примесью EuF-=SUB=-3-=/SUB=-
Author(s) -
S. N. Garibova,
А. И. Исаев,
С. И. Мехтиева,
С.У. Атаева
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48451.9127
Subject(s) - chalcogenide , europium , amorphous solid , materials science , diffraction , raman scattering , raman spectroscopy , interpretation (philosophy) , ion , analytical chemistry (journal) , scattering , matrix (chemical analysis) , x ray crystallography , crystallography , mineralogy , chemistry , optics , physics , metallurgy , organic chemistry , programming language , computer science , composite material
The local structure of film samples of chalcogenide glassy semiconductor Se95As5 and Se95As5(EuF3)x (x = 0.01 ÷ 1 at%) have been studied by X-ray diffraction and Raman scattering. The ‘‘quasi-period’’ of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.