Open AccessСтруктура и электрические свойства тонких пленок (ZnO/SiO-=SUB=-2-=/SUB=-)-=SUB=-25-=/SUB=-
Author(s) -
М. Н. Волочаев,
Ю Е Калинин,
М. А. Каширин,
В. А. Макагонов,
С Ю Панков,
В.В. Бассараб
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48445.9185
Subject(s) - materials science , electrical resistivity and conductivity , amorphous solid , impurity , tetragonal crystal system , nanocrystalline material , thin film , fermi level , variable range hopping , bilayer , conductivity , activation energy , thermal conduction , deposition (geology) , condensed matter physics , analytical chemistry (journal) , nanotechnology , crystallography , crystal structure , composite material , chemistry , membrane , engineering , biology , paleontology , biochemistry , chromatography , quantum mechanics , electron , physics , organic chemistry , sediment , electrical engineering
Multilayer (ZnO/SiO2)25 thin films with a bilayer thickness of 6 to 10 nm has been synthesized in a single deposition process. The structure of the films consist of nanocrystalline ZnO layers and layers of amorphous SiO2. An analysis of the temperature dependences of the electrical resistivity, showed that a consistent change of the dominant conduction mechanism are realized in (ZnO/SiO2)25 thin films at temperatures 77 – 300 K: variable length hopping mechanism in a narrow energy band near the Fermi level at temperatures 77 – 250 K changed by the thermal activated impurity conductivity at close to room temperatures. The density of localized states and the activation energy of impurity conductivity has been estimated.The effect of heat treatment on the structure and electrical properties of the synthesized films has been investigated. It was found that the chemical interaction between the ZnO and SiO2 layers occurs at 580–600°C. It accompanied by the destruction of the multilayer structure and the appearance of the chemical compound Zn2SiO4 with the tetragonal structure (I-42d space group).