Open AccessСвязь релаксации собственного стимулированного пикосекундного излучения GaAs с характерным временем остывания носителей заряда
Author(s) -
N. N. Ageeva,
I. L. Bronevoĭ,
D. N. Zabegaev,
A. N. Krivonosov
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.11.48442.9105
Subject(s) - picosecond , saturation (graph theory) , materials science , relaxation (psychology) , charge carrier density , stimulated emission , emission intensity , atomic physics , optics , optoelectronics , physics , laser , photoluminescence , doping , psychology , social psychology , mathematics , combinatorics
During the powerful picosecond optical pumping of a thin (~ 1 µm) GaAs layer, a stimulated intense (up to 1 GW/cm^2) picosecond emission appeared. As was found, for a fixed density of the pump pulse energy, with an increase of its diameter the characteristic picosecond time τr of the emission and carrier density n relaxation increases. Due to interrelation of the density and the temperature of the carriers at high-intensity emission (in the saturation state of the emission amplification), time τr is associated with the characteristic temperature relaxation time τT of the photo-pumped carriers, which was determined earlier theoretically with the emission-caused carrier heating taken into account. The corresponding analytical expressions for τr as a functions of τT are consistent with the above experimental results.