Open AccessВлияние водорода на электрические свойства структур Pd/InP
Author(s) -
V. A. Shutaev,
V. G. Sidorov,
Е. А. Гребенщикова,
L. K. Vlasov,
A. A. Pivovarova,
Ю.П. Яковлев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.10.48302.9152
Subject(s) - hydrogen , quantum tunnelling , oxide , analytical chemistry (journal) , charge (physics) , nitrogen , chemistry , work function , materials science , atomic physics , physics , optoelectronics , electrode , organic chemistry , chromatography , quantum mechanics
The influence of hydrogen on the electrical properties of Pd /n -InP and Pd/oxide/ n -InP structures is studied. It is found that a variation in the cutoff voltage $$\Delta {{U}_{{{\text{cut-off$$ in the current–voltage characteristics of the structures under study upon exposure to hydrogen with concentrations of 0–1 vol % in a nitrogen–hydrogen mixture is described by the exponential dependence: $$\Delta {{U}_{{{\text{cut-off$$ = a [1 – exp(– b ⋅ N _H)], where N _H is the hydrogen concentration (vol %), and a and b are constants dependent on the type of structures. It is shown that a decisive influence on how the potential-barrier height changes in the Pd / InP and Pd / oxide / InP structures in the presence of H_2 in a gas medium is exerted by a change in the Pd work function in an atmosphere of hydrogen. It is found that, in the structures under study, tunneling and thermal-tunneling charge-transport mechanisms operate at 90–300 K in the presence of hydrogen and without it. With increasing hydrogen concentration in the gas mixture, the predominance of the tunneling charge-transport mechanism becomes more pronounced.