Open AccessXXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Вертикальный полевой транзистор с управляющим p-n-переходом на основе GaAs
Author(s) -
Н.В. Востоков,
В.М. Данильцев,
Sergey Aleksandrovich Kraev,
В.Л. Крюков,
Е.В. Скороходов,
С.С. Стрельченко,
В. Ю. Шашкин
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.10.48282.22
Subject(s) - epitaxy , transistor , optoelectronics , field effect transistor , liquid phase , materials science , channel (broadcasting) , phase (matter) , electrical engineering , chemistry , nanotechnology , physics , layer (electronics) , engineering , voltage , organic chemistry , thermodynamics
The first results on the creation of an original power GaAs field-effect transistor with a vertical channel controlled by the p-n junction are presented. The main technological feature is the use of two separate processes of epitaxial growth in the formation of the transistor structure. The part of the transistor containing the drain, drift and gate areas is grown by liquid-phase epitaxy. The technology of organometallic gas-phase epitaxy is used to form the areas of the channel and the source.