Open AccessСтимулированное терагерцовое излучение доноров висмута в одноосно-деформированном кремнии при внутрицентровом оптическом возбуждении
Author(s) -
Р.Х. Жукавин,
С.Г. Павлов,
Andreas Pohl,
Nikolai V. Abrosimov,
H. Riemann,
Britta Redlich,
H.-W. Hübers,
В.Н. Шастин
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48140.24
Subject(s) - materials science , bismuth , silicon , terahertz radiation , laser , impurity , doping , monocrystalline silicon , crystal (programming language) , optoelectronics , excitation , optics , chemistry , physics , metallurgy , organic chemistry , quantum mechanics , computer science , programming language
The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.