Стимулированное терагерцовое излучение доноров висмута в одноосно-деформированном кремнии при внутрицентровом оптическом возбуждении | Zendy

Р.Х. Жукавин | Zendy; С.Г. Павлов | Zendy; Andreas Pohl | Zendy; N. V. Abrosimov | Zendy; H. Riemann | Zendy; Britta Redlich | Zendy; HeinzWilhelm Hübers | Zendy; В.Н. Шастин | Zendy

Open Access

Стимулированное терагерцовое излучение доноров висмута в одноосно-деформированном кремнии при внутрицентровом оптическом возбуждении

Author(s) -

Р.Х. Жукавин,

С.Г. Павлов,

Andreas Pohl,

N. V. Abrosimov,

H. Riemann,

Britta Redlich,

HeinzWilhelm Hübers,

В.Н. Шастин

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.09.48140.24

Subject(s) - materials science , bismuth , silicon , terahertz radiation , laser , impurity , doping , monocrystalline silicon , crystal (programming language) , optoelectronics , excitation , optics , chemistry , physics , metallurgy , organic chemistry , quantum mechanics , computer science , programming language

The results of the experimental observation of stimulated terahertz emission under optical intracenter excitation of uniaxially strained bismuth-doped silicon are presented. Pumping in the presented experiment is performed using a FELIX free-electron laser. It is shown that uniaxial strain of the silicon crystal leads to a significant change in the stimulated emission spectrum of the impurity.

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