Open AccessКомплексное применение спектроскопии комбинационного рассеяния света и фотолюминесценции для диагностики многослойных гетероструктур
Author(s) -
С.М. Планкина,
О.В. Вихрова,
Б.Н. Звонков,
С.Ю. Зубков,
Р.Н. Крюков,
А.В. Нежданов,
Д.А. Павлов,
И.Ю. Пашенькин,
А.А. Сушков
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48130.13
Subject(s) - materials science , raman spectroscopy , photoluminescence , epitaxy , optoelectronics , spectroscopy , vapor phase , metalorganic vapour phase epitaxy , photodiode , analytical chemistry (journal) , optics , chemistry , nanotechnology , physics , layer (electronics) , quantum mechanics , chromatography , thermodynamics
The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.