Open AccessСпектр двойных акцепторов в слоях барьеров и квантовых ям гетероструктур HgTe/СdHgTe
Author(s) -
Д. В. Козлов,
В.В. Румянцев,
С.В. Морозов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48128.11
Subject(s) - quantum well , heterojunction , photoluminescence , acceptor , condensed matter physics , ionization energy , ionization , charge (physics) , chemistry , materials science , physics , optoelectronics , ion , optics , quantum mechanics , laser , organic chemistry
The states of double acceptors in HgTe/СdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the position of the spectral features in the photoluminescence spectrum of the HgTe/CdHgTe heterostructures containing quantum wells.