Open AccessОсобенности МПЭ ПА синтеза слоев n-=SUP=-+-=/SUP=--GaN на виртуальных подложках GaN/c-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-
Author(s) -
A. M. Mizerov,
S. N. Timoshnev,
E. V. Nikitina,
M. S. Sobolev,
К.Ю. Шубин,
Т.Н. Березовская,
D. V. Mokhov,
В. В. Лундин,
А. Е. Николаев,
А. Д. Буравлев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48126.09
Subject(s) - epitaxy , substrate (aquarium) , materials science , gallium nitride , molecular beam epitaxy , gallium , silicon , doping , template , nitrogen , analytical chemistry (journal) , optoelectronics , desorption , deposition (geology) , nanotechnology , chemistry , layer (electronics) , metallurgy , adsorption , paleontology , oceanography , organic chemistry , chromatography , sediment , biology , geology
The results obtained in a study of the synthesis of n ^+-GaN layers by plasma-assisted molecular-beam epitaxy on GaN/ c -Al_2O_3 templates are reported. In particular, a method is developed for the pre-epitaxial cleaning of the GaN surfaces of templates to remove foreign atoms. It is shown that, to form GaN layers of comparatively good quality, including those doped with silicon up to ~4 . 6 × 10^19 cm^–3, GaN template surfaces should be pre-epitaxially cleaned in a flow of activated nitrogen particles, with the substrate temperature increased from T _ S = 400 to 600°C and the substrate surface subsequently exposed to a flow of activated nitrogen at a fixed value of T _ S = 600°C for 1 h. After that the substrate temperature should be raised to T _ S = 700°C and the GaN surface finally cleaned by means of a procedure for gallium deposition/desorption.