Open AccessСверхтонкое взаимодействие и рекомбинация Шокли--Рида--Холла в полупроводниках
Author(s) -
Е.Л. Ивченко,
В.К. Калевич,
A. Kunold,
Andréa Balocchi,
Xavier Marie,
T. Amand
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48124.07
Subject(s) - paramagnetism , excitation , hyperfine structure , atomic physics , recombination , semiconductor , spin (aerodynamics) , condensed matter physics , magnetic field , electron , electron paramagnetic resonance , materials science , physics , chemistry , nuclear magnetic resonance , optoelectronics , biochemistry , quantum mechanics , gene , thermodynamics
Experimental and theoretical studies on optical orientation and spin-dependent recombination in a semiconductor in a magnetic field under the normal incidence of circularly polarized radiation onto the sample surface are reviewed. The experiments were carried out on GaAs_1 –_ x N_ x solid solutions, in which Ga^2+ interstitial displacement defects play the role of deep paramagnetic centers responsible for spin-dependent recombination. It is established that, in the investigated materials, the hyperfine interaction of a localized electron with one nucleus of the paramagnetic center remains strong even at room temperature. The theory is compared with an experiment conducted in the steady-state excitation mode and under two-pulse pump-probe conditions. An analytical formula for spin beats in a magnetic field is derived.