Open AccessЛегирование термоэлектрических материалов на основе твeрдых растворов SiGe в процессе их синтеза методом электроимпульсного плазменного спекания
Author(s) -
М. В. Дорохин,
П. Б. Демина,
I. V. Erofeeva,
А. В. Здоровейщев,
Ю.М. Кузнецов,
М. С. Болдин,
А. А. Попов,
Е. А. Ланцев,
А.В. Боряков
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.09.48121.04
Subject(s) - spark plasma sintering , thermoelectric effect , materials science , doping , figure of merit , seebeck coefficient , thermoelectric materials , sintering , antimony , electrical resistivity and conductivity , analytical chemistry (journal) , optoelectronics , metallurgy , composite material , thermal conductivity , thermodynamics , chemistry , electrical engineering , chromatography , physics , engineering
The results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si_1 –_ x Ge_ x solid solutions doped with Sb to a concentration of 0–5 at % are presented. It was found that, at Sb concentration below 1 at %, efficient doping of the solid solution was carried out during the sintering process, which allowed us to form a thermoelectric material with a relatively high thermoelectric figure of merit. An increase in the concentration of antimony in the range of 1–5 at % led to a change in the mechanism of doping, which resulted in an increase in the resistance of materials and the segregation of Sb into large clusters. For such materials, a significant decrease in the Seebeck coefficient and thermoelectric figure of merit was noted. The highest obtained thermoelectric figure of merit (ZT) with Sb doping was 0.32 at 350°C, which is comparable with known analogues for the Ge_ x Si_1 –_ x solid solution.