Open AccessSensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass -=SUP=-*-=/SUP=-
Author(s) -
S.N. Abolmasov,
А. Абрамов,
A.V. Semenov,
I.S. Shakhray,
Е. И. Теруков,
E. V. Malchukova,
И. Н. Трапезникова
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.08.48008.9113
Subject(s) - passivation , silicon , materials science , attenuated total reflection , amorphous silicon , amorphous solid , crystalline silicon , nanocrystalline silicon , silane , fourier transform infrared spectroscopy , heterojunction , optoelectronics , infrared , infrared spectroscopy , epitaxy , layer (electronics) , optics , nanotechnology , crystallography , chemistry , composite material , physics , organic chemistry
Attenuated total reflection Fourier transform infrared (ATR FTIR) spectroscopy and effective lifetime measurements have been used to characterize amorphous/crystalline silicon surface passivation in silicon heterojunction solar cells. The comparative studies show a strong link between microstructure factor R * and effective lifetime of amorphous silicon ( a -Si:H) passivation layers incorporating an interface buffer layer, which prevents the epitaxial growth. It is demonstrated that thin a -Si:H films deposited on glass can be used as ATR substrates in this case. The obtained results show that a -Si:H films with R * close to 0.1 are required for manufacturing of high-efficiency (>23%) silicon heterojunction solar cells.