Влияние висмута на свойства упругонапряженных гетероструктур AlGaInAsP&lt;Bi&gt;/InP | Zendy

М. Л. Лунина | Zendy; Л. С. Лунин | Zendy; Д. Л. Алфимова | Zendy; А. С. Пащенко | Zendy; E. Danilina | Zendy; В.В. Нефедов | Zendy

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Влияние висмута на свойства упругонапряженных гетероструктур AlGaInAsP<Bi>/InP

Author(s) -

М. Л. Лунина,

Л. С. Лунин,

Д. Л. Алфимова,

А. С. Пащенко,

E. Danilina,

В.В. Нефедов

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.08.48003.9082

Subject(s) - indium phosphide , heterojunction , epitaxy , bismuth , luminescence , indium , materials science , yield (engineering) , optoelectronics , condensed matter physics , nanotechnology , gallium arsenide , physics , composite material , metallurgy , layer (electronics)

The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

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