Open AccessВлияние висмута на свойства упругонапряженных гетероструктур AlGaInAsP<Bi>/InP
Author(s) -
М. Л. Лунина,
Л. С. Лунин,
Д. Л. Алфимова,
А. С. Пащенко,
E. Danilina,
В.В. Нефедов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.08.48003.9082
Subject(s) - indium phosphide , heterojunction , epitaxy , bismuth , luminescence , indium , materials science , yield (engineering) , optoelectronics , condensed matter physics , nanotechnology , gallium arsenide , physics , composite material , metallurgy , layer (electronics)
The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.