Open AccessИсследование вольт-амперных характеристик новых гетероструктур MnO-=SUB=-2-=/SUB=-/GaAs(100) и V-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-/GaAs(100), прошедших термическую обработку
Author(s) -
Б. В. Сладкопевцев,
Г. И. Котов,
И. Н. Арсентьев,
I. S. Shashkin,
И. Я. Миттова,
Е. В. Томина,
А. А. Самсонов,
P. Kostenko
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.08.47998.9123
Subject(s) - materials science , heterojunction , oxide , analytical chemistry (journal) , reverse bias , arsenic , breakdown voltage , atmospheric temperature range , current density , thermal oxidation , voltage , optoelectronics , chemistry , electrical engineering , metallurgy , physics , chromatography , diode , quantum mechanics , meteorology , engineering
Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V_2O_5 and MnO_2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I – V ) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V_2O_5 facilitates the more intense (in comparison with MnO_2) chemical bonding of arsenic at the internal interface with the formation of As_2O_5. As a result, thermally oxidized V_2O_5/GaAs heterostructures exhibit higher breakdown voltages.