Open AccessНаблюдение областей отрицательной дифференциальной проводимости и генерации тока при туннелировании через нульмерные уровни дефектов барьера h-BN в гетероструктурах графен/h-BN/графен
Author(s) -
Ю.Н. Ханин,
Е. Е. Вдовин,
Artem Mishchenko,
Kostya S. Novoselov
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.08.47995.9093
Subject(s) - graphene , quantum tunnelling , condensed matter physics , van der waals force , conductivity , materials science , nanotechnology , physics , quantum mechanics , molecule
AbstractTunneling and magnetic tunneling are investigated in graphene/ h -BN/graphene van der Waals heterosystems. Two new types of systems are found, in which negative differential conductivity regions are implemented due to resonant tunneling through defect levels in the h -BN barrier, and current caused by their presence is generated.