Open AccessДиффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-
Author(s) -
И.Е. Тысченко,
M. Voelskow,
А.Н. Михайлов,
Д.И. Тетельбаум
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.08.47989.9109
Subject(s) - nanoclusters , annealing (glass) , rutherford backscattering spectrometry , analytical chemistry (journal) , atmospheric temperature range , materials science , ion , spectroscopy , nitrogen , crystallography , atomic physics , chemistry , thin film , nanotechnology , metallurgy , thermodynamics , physics , organic chemistry , chromatography , quantum mechanics
By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.