Open AccessИсследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии
Author(s) -
П. В. Середин,
A. S. Lenshin,
D. S. Zolotukhin,
Д.Л. Голощапов,
A. M. Mizerov,
И. Н. Арсентьев,
A. N. Beltiukov
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47882.9084
Subject(s) - heterojunction , molecular beam epitaxy , nanoporous , materials science , morphology (biology) , layer (electronics) , spectroscopy , isotropy , silicon , optoelectronics , epitaxy , nanotechnology , optics , physics , quantum mechanics , biology , genetics
This paper reports on influence of the nanoporous Si buffer layer on morphological, physical and structural properties of the InxGa1-xN layer with nanocolumnar morphology of the surface, grown by plasma assisted molecular beam epitaxy on the traditional Si(111) substrates. By means of various structural and spectroscopy methods electronic structure, morphology of the surface and optical properties of grown heterostructures was studied. We showed that usage of por-Si ad-layer helps to achieve more isotropic InGaN nanocolumns diameter distribution as well as to increase PL intensity up to 25%.