Open AccessCвойства полуполярного GaN, выращенного на подложке Si(100)
Author(s) -
Anna Solomnikova,
В. Н. Бессолов,
E. V. Konenkova,
T. S. Orlova,
S. N. Rodin,
N. V. Seredova,
M. P. Shcheglov,
D. S. Kibalov,
V. K. Smirnov
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47881.9049
Subject(s) - materials science , stacking , chemical vapor deposition , layer (electronics) , yield (engineering) , substrate (aquarium) , luminescence , diffraction , bar (unit) , optoelectronics , deposition (geology) , metalorganic vapour phase epitaxy , nanostructure , nanotechnology , optics , epitaxy , composite material , chemistry , paleontology , oceanography , physics , organic chemistry , sediment , geology , meteorology , biology
emipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si_ x N_ y nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 $$\bar {1}$$ 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 $$\bar {1}$$ 1) layers with a full-width at half-maximum of the diffraction-curve of ω_θ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSF_ S -I_1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.