Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами | Zendy

Oleg Korolkov | Zendy; Vitali Kozlovskii | Zendy; A. A. Lebedev | Zendy; Н. Слепчук | Zendy; Jana Toompuu | Zendy; Toomas Rang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами

Author(s) -

Oleg Korolkov,

Vitali Kozlovskii,

A. A. Lebedev,

Н. Слепчук,

Jana Toompuu,

Toomas Rang

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.07.47879.9089

Subject(s) - irradiation , annealing (glass) , schottky diode , materials science , diode , electron , isothermal process , electron beam processing , capacitance , optoelectronics , analytical chemistry (journal) , chemistry , composite material , physics , electrode , nuclear physics , thermodynamics , chromatography

The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n -4 H -SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 10^16 cm^–2. It is shown that the forward current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research