Open AccessНизкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронами
Author(s) -
Oleg Korolkov,
Vitali Kozlovskii,
А. А. Лебедев,
Н. Слепчук,
Jana Toompuu,
Toomas Rang
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47879.9089
Subject(s) - irradiation , annealing (glass) , schottky diode , materials science , diode , electron , isothermal process , electron beam processing , capacitance , optoelectronics , analytical chemistry (journal) , chemistry , composite material , physics , electrode , nuclear physics , thermodynamics , chromatography
The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n -4 H -SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 10^16 cm^–2. It is shown that the forward current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min.