Open AccessТемпературная активация электронов проводимости в двойной квантовой яме HgTe/CdHgTe p-типа проводимости со слоями HgTe критической толщины
Author(s) -
Сергей Михайлович Подгорных,
М.В. Якунин,
С. С. Криштопенко,
М. Р. Попов,
N. N. Mikhaĭlov,
С. А. Дворецкий
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47870.9087
Subject(s) - condensed matter physics , heterojunction , electron , quantum hall effect , hall effect , magnetic field , quantum well , plateau (mathematics) , asymmetry , atmospheric temperature range , thermal conduction , materials science , physics , optics , quantum mechanics , mathematical analysis , laser , mathematics , meteorology
The temperature dependences of the Hall coefficient and magnetoresistivity of a p -type HgTe/CdHgTe double quantum well with HgTe layers of critical thickness in the temperature range T = 35–300 K under magnetic fields up to 9 T are investigated. The position of the earlier observed reentrant quantum Hall transition from plateau i = 1 to plateau i = 2 is found to be close to the transition field from light to heavy holes with an increase in the magnetic field in the classical Hall effect. It is found that thermally activated light electrons contribute to the Hall effect along with light and heavy holes at T ≥ 35 K. The activation energy of electrons is estimated from the temperature dependence of the electron concentration as 28 meV, which exceeds the calculated value from the lateral maximum of the valence subband to the edge of the lowest conduction subband, probably because of heterostructure asymmetry.