Open AccessЭлектрические и оптические свойства нерелаксированных гетероэпитаксиальных структур InAs-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=-
Author(s) -
R. R. Guseĭnov,
В.А. Танрывердиев,
Gregory Belenky,
G. Kipshidze,
Е.H. Алиева,
Х.В. Алигулиева,
Elvin H. Alizade,
Х.Н. Ахмедова,
Н. А. Абдуллаев,
Nazim Mamedov,
V. N. Zverev
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47868.9044
Subject(s) - dielectric , condensed matter physics , band gap , electron , electrical resistivity and conductivity , materials science , refractive index , photoconductivity , hall effect , photon energy , dispersion (optics) , conductivity , photon , optics , chemistry , physics , optoelectronics , quantum mechanics
The electrical and galvanomagnetic properties of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) were studied in a wide temperature range of 5-300K and magnetic fields up to 8 T. The band gap of the composition InAs0.57Sb0.43 was estimated from the thermo-activation dependence of the electrical conductivity, and is equal to 120 meV. The electron concentration in InAs1-xSbx (n=6·1016 cm-3 for InAs0.62Sb0.38 and n=5·1016 cm-3 for InAs0.57Sb0.43) determined from the Hall effect and consistent with the electron concentration calculated from Shubnikov-de Haas oscillations. Also, implemented spectral ellipsometric studies of unrelaxed heteroepitaxial structures of InAs1-xSbx (x = 0.43 and x = 0.38) in the photon energy range of 1-6 eV. The spectral dependences of the imaginary and real parts of the dielectric constant are determined. The dispersion dependences of the refractive indices and extinction are calculated and given.