Open AccessЭволюция физико-химических свойств поверхности GaSb(100) в растворах сульфида аммония
Author(s) -
М.В. Лебедев,
Т.В. Львова,
А.Л. Шахмин,
О.В. Рахимова,
П.А. Дементьев,
И.В. Седова
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47866.9070
Subject(s) - passivation , antimony , x ray photoelectron spectroscopy , sulfide , aqueous solution , inorganic chemistry , oxide , stoichiometry , materials science , semiconductor , chemistry , layer (electronics) , gallium , analytical chemistry (journal) , chemical engineering , metallurgy , nanotechnology , optoelectronics , chromatography , engineering
Various conditions of passivation of the GaSb(100) surface by ammonium sulfide ((NH_4)_2S) solutions depending on the solution concentration, solvent, and treatment time are investigated by X-ray photoelectron spectroscopy and atomic-force microscopy. It is shown that treatment of the GaSb(100) surface by any (NH_4)_2S solution leads to removal of the native oxide layer from the semiconductor surface and the formation of a passivating layer consisting of various gallium and antimony sulfides and oxides. The surface with the lowest roughness (RMS = 0.85 nm) is formed after semiconductor treatment with 4% aqueous ammonium sulfide solution for 30 min. Herewith, the atomic concentration ratio Ga/Sb at the surface is ~2. It is also found that aqueous ammonium sulfide solutions do not react with elemental antimony incorporated into the native-oxide layer. The latter causes a leakage current and Fermi-level pinning at the GaSb(100) surface. However, a 4% (NH_4)_2S solution in isopropanol removes elemental antimony almost completely; herewith, the semiconductor surface remains stoichiometric if a treatment duration is up to 13 min.