Изопараметрические гетероструктуры AlInGaAsP/InP и их свойства | Zendy

Д.Л. Алфимова | Zendy; Л.С. Лунин | Zendy; М.Л. Лунина | Zendy; А.С. Пащенко | Zendy; Э.М. Данилина | Zendy

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Изопараметрические гетероструктуры AlInGaAsP/InP и их свойства

Author(s) -

Д.Л. Алфимова,

Л.С. Лунин,

М.Л. Лунина,

А.С. Пащенко,

Э.М. Данилина

Publication year - 2019

Publication title -

физика и техника полупроводников

Language(s) - English

Resource type - Journals

eISSN - 1726-7315

pISSN - 0015-3222

DOI - 10.21883/ftp.2019.07.47865.9045

Subject(s) - indium phosphide , epitaxy , materials science , indium , heterojunction , thin film , optoelectronics , engineering physics , nanotechnology , engineering , gallium arsenide , layer (electronics)

The paper discusses the influence of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures. The main parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium phosphide substrates from the liquid phase in the temperature gradiend field are determined.

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