Open AccessИзопараметрические гетероструктуры AlInGaAsP/InP и их свойства
Author(s) -
Д.Л. Алфимова,
Л.С. Лунин,
М.Л. Лунина,
А.С. Пащенко,
Э.М. Данилина
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47865.9045
Subject(s) - indium phosphide , epitaxy , materials science , indium , heterojunction , thin film , optoelectronics , engineering physics , nanotechnology , engineering , gallium arsenide , layer (electronics)
The paper discusses the influence of growth conditions on the structural perfection of AlInGaAsP/InP thin-film heterostructures. The main parameters determining the structural perfection and surface quality of thin AlInGaAsP epitaxial films grown on indium phosphide substrates from the liquid phase in the temperature gradiend field are determined.