Open AccessО структуре энергетического спектра дырок в материалах A-=SUP=-IV-=/SUP=-B-=SUP=-VI-=/SUP=- под иным углом зрения
Author(s) -
Л.В. Прокофьева,
П.П. Константинов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.07.47863.8953
Subject(s) - doping , tin , charge carrier , analytical chemistry (journal) , electron , materials science , hysteresis , condensed matter physics , chemistry , atomic physics , physics , nuclear physics , metallurgy , chromatography
The twofold decrease in hole concentration of all PbTe samples at 77–450 K and the same effect achieved at 77 K and heavy doping only due to introduction in PbTe of tin small addition, supplemented by observation in indicated range of temperature hysteresis in hole concentration, are the grounds for developing an other approach to a study of the energy spectrum in A(IV)B(VI) materials, an alternative two-band model. It is based on the common for these materials phenomenon — compensation of current carriers as a reaction on electroactive doping. The appearance of compensation is associated with initial (at temperatures below 77 K) two-charge process — participation in a single doping act of the pair of electrons due to their mutual attraction. With a rise in temperature, as with introduction of tin, the situation is changed. The study of all aspects of transformation is a task for further research.