Open AccessКоррекция характеристик обратного восстановления высоковольтных инжекционных 4H-SiC диодов с помощью протонного облучения
Author(s) -
П.А. Иванов,
М.Ф. Кудояров,
А.С. Потапов,
Т.П. Самсонова
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.06.47743.9073
Subject(s) - irradiation , diode , materials science , proton , optoelectronics , voltage , electrical engineering , nuclear physics , physics , engineering
The effect of proton irradiation on electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes have been investigated. The diodes were irradiated through 10-µm thick Ni-film. The energy of protons and irradiation dose were 2.8 MeV and 4×1011 cm-2, respectively. After proton irradiation, the diodes exhibited 35-% increasing in on-state resistance, about 3 times decreasing in the reverse recovery charge with the reverse recovery character being "hard".