Open AccessОблучение протонами 4H-SiC фотоприемников с барьером Шоттки
Author(s) -
E. V. Kalinina,
G. N. Violina,
I. P. Nikitina,
М.А. Яговкина,
Э. В. Иванова,
В. В. Забродский
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.06.47742.9072
Subject(s) - irradiation , fluence , materials science , ultraviolet , amorphous solid , proton , photosensitivity , optoelectronics , silicon carbide , crystallography , chemistry , composite material , physics , nuclear physics
For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4 H -SiC epitaxial layers are carried out by the X-ray and optical methods before and after irradiation with 15-MeV protons with fluences in the range of (1–4) × 10^12 cm^–2. When increasing the fluence of proton irradiation, the formation of localized regions with negative deformation is observed along with the unperturbed silicon-carbide matrix. Agreement between the X-ray and optical studies is obtained, which makes it possible to explain the features of the spectral changes in the photosensitivity of detectors in the range of 200–400 nm with an increase in the fluence of proton irradiation. The ultraviolet Cr/4 H -SiC photodetectors withstand irradiation by 15-MeV protons with a fluence of 4 × 10^12 cm^–2 virtually without any changes in the photosensitivity due to the gettering of simple defects by cluster and amorphous formations, which lead to partial structural improvement of the irradiated material.