Open AccessХарактер изменения обратного тока в туннельных МДП-диодах с фторидом кальция на Si(111) при создании дополнительного оксидного слоя
Author(s) -
А.Г. Банщиков,
Ю.Ю. Илларионов,
М.И. Векслер,
S. Wachter,
Н.С. Соколов
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.06.47740.9062
Subject(s) - quantum tunnelling , materials science , dielectric , metal , condensed matter physics , current (fluid) , reverse bias , fluoride , layer (electronics) , range (aeronautics) , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , metallurgy , composite material , inorganic chemistry , physics , thermodynamics , chromatography , diode
The currents flowing in metal–CaF_2– n -Si and metal–SiO_2–CaF_2– n -Si structures with the same (about 1.5 nm) fluoride thickness are compared in the reverse-bias mode. It is revealed that the current in the case of a two-layer dielectric can be notably higher within a certain voltage range. Such unexpected behavior is associated with the coexistence of both electron and hole components of the current as well as with the configuration of the SiO_2–CaF_2 barrier through which tunneling occurs. The results of measurements and explanatory simulation data are presented.