Open AccessСветодиоды на основе асимметричной двойной гетероструктуры InAs/InAsSb/InAsSbP для детектирования CO-=SUB=-2-=/SUB=- (λ=4.3 мкм) и CO (λ=4.7 мкм)
Author(s) -
V. V. Romanov,
Игорь Алексеевич Белых,
Е. А. Иванов,
P. A. Alekseev,
Н.Д. Ильинская,
Ю.П. Яковлев
Publication year - 2019
Publication title -
fizika i tehnika poluprovodnikov
Language(s) - English
Resource type - Journals
eISSN - 1726-7315
pISSN - 0015-3222
DOI - 10.21883/ftp.2019.06.47738.9051
Subject(s) - diode , light emitting diode , optoelectronics , electroluminescence , materials science , heterojunction , duty cycle , optical power , voltage , optics , laser , physics , nanotechnology , layer (electronics) , quantum mechanics
Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor-phase epitaxy. Two types of light–emitting diodes (A and B) were created on basis of grown heterostructures with emission peak at 4.1 µm and 4.7 µm, respectively. The current–voltage and electroluminescent characteristics of light–emitting diodes are investigated at room temperature. When operating at 50 % duty cycle mode (frequency − 512 Hz) with a current of 250 mA, light–emitting diodes A and B produced the optical power of 24 μW and 15 μW, respectively. Under the pulse operation (frequency − 512 Hz, duration − 1 μs) with a current of 2.1 A, the optical power of light–emitting diodes А and B reached the values of 158 μW and 76 μW, respectively. The developed light–emitting diodes can be used as high-effective radiation sources in optical absorption sensors for detection of carbon dioxide and carbon monoxide in the atmosphere.